GaAs MOSFET High-Speed Logic
- 1 May 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 28 (5), 483-486
- https://doi.org/10.1109/tmtt.1980.1130105
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electrical characteristics of the plasma-grown native-oxide/GaAs interfaceApplied Physics Letters, 1979
- The prospects for ultrahigh-speed VLSI GaAs digital logicIEEE Transactions on Electron Devices, 1979
- Computer Simulation of Modulational Instability for the Electron Plasma WaveJapanese Journal of Applied Physics, 1979
- A study of high-speed normally off and normally on Al0.5Ga0.5As heterojunction gate GaAs FET's (HJFET)IEEE Transactions on Electron Devices, 1978
- Femtojoule high speed planar GaAs E-JFET logicIEEE Transactions on Electron Devices, 1978
- Low-temperature plasma oxidation of GaAsApplied Physics Letters, 1978
- GaAs MESFET logic with 4-GHz clock rateIEEE Journal of Solid-State Circuits, 1977
- Femtojoule logic circuit using normally-off GaAs m.e.s.f.e.t.sElectronics Letters, 1977