Electrical characteristics of the plasma-grown native-oxide/GaAs interface

Abstract

Some basic features of the electronic properties of the plasma‐grown native‐oxide/GaAs interface have been investigated using transient current measurements on MOSFET structures. One of the most striking results is that injection and subsequent trapping in the native oxide is the mechanism responsible for a reduction in the amount of conduction electrons induced at the interface. The initial phase of stored electron decay is due to backtunneling from electron‐trapping centers in the particular oxide region near the interface. The final phase of decay is caused by detrapping from a 0.60‐eV Frenkel‐Poole center in the oxide bulk.