Abstract
It is shown that for electronic surface problems in a tetrahedrally coordinated solid it is possible to reduce a four-orbital sp3 tight-binding model to an equivalent one-orbital s model. This is the surface analogue of the Weaire-Thorpe transformation (1971) for the bulk. One example of the transformation, which is a reasonably good representation of (111) surface of silicon, is carried out in detail. It exhibits four bands of surface states-two of them almost totally overlapping-in the valence-band region and one band of dangling-bond surface states in the optical gap. The calculation is for the whole two-dimensional Brillouin zone and compares satisfactorily with other calculations.