Electron heating and free-carrier absorption in GaAs/AlGaAs single heterostructures
- 1 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (3), 291-293
- https://doi.org/10.1063/1.95662
Abstract
We observe far infrared broadband emission from the hot two-dimensional electron plasma in GaAs/AlGaAs single heterostructures grown by molecular beam epitaxy. The radiation is analyzed in two different frequency regimes (around 35 and 100 cm−1). From the relative dependence of the intensities on the applied longitudinal electric field the hot-electron temperatures are determined. From the absolute emission intensities values of the free-carrier absorption coefficient (down to 10−5 in ultrahigh mobility samples) are measured.Keywords
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