Determination of diamond [100] and [111] growth rate and formation of highly oriented diamond film by microwave plasma-assisted chemical vapor deposition
- 1 December 1995
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 10 (12), 3115-3123
- https://doi.org/10.1557/jmr.1995.3115
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Formation of highly oriented diamond film on carburized (100) Si substrateJournal of Materials Research, 1995
- Worldwide status of low temperature growth of diamondDiamond and Related Materials, 1994
- Surface reaction kinetics of gas-phase diamond growthJournal of Applied Physics, 1993
- Chemical vapour deposition and characterization of smooth {100}-faceted diamond filmsDiamond and Related Materials, 1993
- Determination of activation energies for diamond growth by an advanced hot filament chemical vapor deposition methodApplied Physics Letters, 1991
- The growth kinetics of diamond films deposited by hot-filament chemical vapor depositionJournal of Applied Physics, 1991
- Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in AirJapanese Journal of Applied Physics, 1991
- Growth mechanism of vapor-deposited diamondJournal of Materials Research, 1988
- Growth of diamond particles from methane-hydrogen gasJournal of Materials Science, 1982
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981