FIELD-ENHANCED EMISSION AND CONSTANT-FIELD DOMAINS IN SEMICONDUCTORS WITH DEEP TRAPS
- 1 August 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (3), 79-81
- https://doi.org/10.1063/1.1652915
Abstract
Evidence is presented which indicates that electron and hole emission from the acceptor level in gold‐compensated n‐type silicon is enhanced by electric fields and that this effect can account for the disparity between various measurements of emission rates. The effect can also lead to the formation of neutral high‐field domains.Keywords
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