Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

Abstract

Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be “tuned” by varying the manganate stochiometry. A device with La_0.7Ca_0.3MnO₃ as the semiconductor and PbZr_0.2Ti_0.8O₃ as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.