An explanation for the phenomenon of meniscus lines on the surfaces of (GaAl) as alloys grown by LPE
- 1 August 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 39 (2), 216-222
- https://doi.org/10.1016/0022-0248(77)90266-4
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- An improved LPE growth method for GaAs-Ga1-xAlxAs double heterostructuresJournal of Crystal Growth, 1976
- Selective etching of semi-insulating gallium arsenideSolid-State Electronics, 1976
- A phenomenological study of meniscus lines on the surfaces of GaAs layers grown by LPEJournal of Crystal Growth, 1975
- Theory of grain boundary grooving under the combined action of the surface and volume diffusion mechanismsActa Metallurgica, 1973
- Growth of Smooth Uniform Epitaxial Layers by Liquid-Phase-Epitaxial MethodJournal of Applied Physics, 1972
- Grain-Boundary Grooving by Surface Diffusion for Finite Surface SlopesJournal of Applied Physics, 1971
- DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2Applied Physics Letters, 1970
- Growth of Atomically Flat Surfaces on Germanium DendritesJournal of Applied Physics, 1960
- The effect of thermal grooving on grain boundary motionActa Metallurgica, 1958