Selective etching of semi-insulating gallium arsenide
- 30 September 1976
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (9), 815-816
- https://doi.org/10.1016/0038-1101(76)90160-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electrolytic etching and electron mobility of GaAs for FET'sSolid-State Electronics, 1974
- A method for selective substrate removal from thin p-type gallium arsenide layersJournal of Physics E: Scientific Instruments, 1974
- Electrolytic Removal of P-Type GaAs Substrates from Thin, N-Type Semiconductor LayersJournal of the Electrochemical Society, 1970