Investigation of defects and striations in as-grown Si crystals by SEM using Schottky diodes
- 15 September 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (6), 313-315
- https://doi.org/10.1063/1.88482
Abstract
As‐grown silicon crystals are investigated in the scanning electron microscope using Schottky barrier diodes in the electron‐beam‐induced current mode. Dislocations, A‐ and B‐type swirl defects, as well as dopant striations are detected. In high‐resistivity crystals (∼1000 Ω cm) variations in dopant concentration of 1012 cm−3 are readily revealed. Hydrogen doping is found to eliminate preferential recombination at microdefects. It is established that bulk stresses due to carbon striations have no detectable electrical effect.Keywords
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