Impurity redistribution in Bi-implanted Si after nanosecond and picosecond Nd laser pulse irradiation
- 1 September 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (5), 456-458
- https://doi.org/10.1063/1.93570
Abstract
The redistribution in Bi-implanted Si was measured after irradiation with 25-ps or 35-ns Nd laser pulses by channeling effect measurements in combination with MeV He+ backscattering. For both pulse durations some of the Bi accumulated at the surface and the amount of segregation depended on the substrate orientation. The impurity redistribution was similar after nanosecond or picosecond laser pulses thus indicating that the solidification velocities were comparable for the two cases.Keywords
This publication has 9 references indexed in Scilit:
- Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulsesApplied Physics Letters, 1982
- Space-time resolved reflectivity measurements of picosecond laser-pulse induced phase transitions in (111) silicon surface layersApplied Physics A, 1982
- Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of SiPhysical Review Letters, 1982
- Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulsesApplied Physics Letters, 1981
- Orientation and velocity dependence of solute trapping in SiApplied Physics Letters, 1981
- Dependence of trapping and segregation of indium in silicon on the velocity of the liquid-solid interfaceApplied Physics Letters, 1980
- Dynamics of dense laser-induced plasmasPhysical Review B, 1980
- Segregation and increased dopant solubility in Pt-implanted and laser-annealed Si layersApplied Physics Letters, 1980
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979