Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets
- 1 May 1996
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5), 619-625
- https://doi.org/10.1007/bf02666513
Abstract
No abstract availableKeywords
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