Axial Mode Spectra of Planar Stripe Geometry Laser Diodes
- 1 October 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (10A), L633
- https://doi.org/10.1143/jjap.21.l633
Abstract
The influence of spontaneous emission on the axial mode spectrum of semiconductor laser diodes is described by solving the wave equation of each mode and calculating the rate of spontaneous emission coupled into the mode. Since we employ a quantum mechanical gain model, spectral gain and spontaneous emission are unambiguously correlated to carrier density. Spectra of axial modes are calculated for different power levels, gain widths and cavity lengths.Keywords
This publication has 16 references indexed in Scilit:
- Analysis of Spontaneous Emission Effects on Spectra and L vs I Characteristics of Diode LasersJapanese Journal of Applied Physics, 1982
- Properties of MO-CVD-grown GaAs/GaAlAs lasers as a function of stripewidthIEEE Journal of Quantum Electronics, 1981
- Effect of waveguiding properties on the axial mode competition in stripe-geometry semiconductor lasersIEEE Journal of Quantum Electronics, 1981
- Short-cavity single-mode 1.3 μm InGaAsP lasers with evaporated high-reflectivity mirrorsElectronics Letters, 1981
- Spontaneous emission factor of narrow-stripe gain-guided diode lasersElectronics Letters, 1981
- Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguidingIEEE Journal of Quantum Electronics, 1979
- Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operationIEEE Journal of Quantum Electronics, 1977
- Theoretical effects of exponential band tails on the properties of the injection laserSolid-State Electronics, 1969
- Optical Maser Oscillators and NoiseBell System Technical Journal, 1964
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954