Direct gain modulation of a semiconductor laser by a GaAs picosecond optoelectronic switch
- 1 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1), 25-27
- https://doi.org/10.1063/1.93752
Abstract
We report a novel application of high-speed optoelectronic switches for direct gain modulation of semiconductor lasers. A GaAs/GaAlAs buried heterostructure laser is driven by a Cr-doped GaAs photoconducting switch activated by a synchronously mode-locked cw dye laser. Infrared light pulses of 55-ps width are emitted from the semiconductor laser.Keywords
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