Reactions of group iii acceptors with oxygen in silicon crystals
- 1 June 1960
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 13 (3-4), 187-203
- https://doi.org/10.1016/0022-3697(60)90002-0
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- The Temperature Variation of the Concentration of Impurity Carriers in SiliconProceedings of the Physical Society, 1958
- Absorption spectrum of bismuth-doped SiliconJournal of Physics and Chemistry of Solids, 1958
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Hall and Drift Mobility in High-Resistivity Single-Crystal SiliconPhysical Review B, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Resistivity changes in silicon single crystals induced by heat treatmentActa Metallurgica, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Hall Mobility of Electrons and Holes in SiliconPhysical Review B, 1954
- Drift Mobilities in Semiconductors. II. SiliconPhysical Review B, 1954