Hall and Drift Mobility in High-Resistivity Single-Crystal Silicon

Abstract

Room-temperature Hall and drift mobilities have been measured for samples of single-crystal silicon ranging in resistivity from about ${10}^{-2\mathrm{}}$ ohm cm to nearly intrinsic. The Hall mobility figures indicated for lattice scattering are 1560 and 345 ${\mathrm{cm}}^2$/volt sec for electrons and holes respectively, whereas drift mobility values of 1360 and 510 ${\mathrm{cm}}^2$/volt sec for electrons and holes, respectively, are found.