Ground states of shallow donors in silicon and germanium
- 30 July 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (10), 1162-1167
- https://doi.org/10.1088/0022-3719/4/10/024
Abstract
The ground state energies of phosphorus, arsenic and antimony in silicon and germanium crystals are calculated. The 'central cell corrections' due to the repulsive core potentials and spatial variations of the effective mass and dielectric function are taken into account and a good agreement with experiment is achieved. The ground state of bismuth impurity is also discussed.Keywords
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