Antiferromagneticexchange in ferromagneticepilayers
- 15 May 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (20), 12935-12939
- https://doi.org/10.1103/physrevb.59.12935
Abstract
The exchange interaction of p-type epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration.
Keywords
This publication has 23 references indexed in Scilit:
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- III–V based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlatticesApplied Physics Letters, 1997
- Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSbPhysical Review Letters, 1997
- s,p-dexchange interaction in Cr-based diluted magnetic semiconductorsPhysical Review B, 1996
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Chromium-based diluted magnetic semiconductorsPhysical Review B, 1994
- Ferromagneticp-dexchange inSe diluted magnetic semiconductorPhysical Review Letters, 1993
- Interaction between band electrons and transition-metal ions in diluted magnetic semiconductorsPhysical Review B, 1992
- Epitaxy of III–V diluted magnetic semiconductor materialsJournal of Vacuum Science & Technology B, 1990
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989