Antiferromagneticpdexchange in ferromagneticGa1xMnxAsepilayers

Abstract
The s,pd exchange interaction of p-type Ga1xMnxAs(x<0.05) epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic pd exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration.