Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence
- 1 August 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (8), 509-516
- https://doi.org/10.1007/bf02666010
Abstract
No abstract availableKeywords
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