Hydrogen in crystalline silicon: A deep donor?
- 6 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (14), 918-920
- https://doi.org/10.1063/1.98032
Abstract
An analysis of the hydrogen concentration profiles obtained from secondary ion mass spectrometry in boron‐doped silicon points to a deep donor hydrogen state located ∼0.1 eV above the Fermi level for intrinsic material. The theoretical model takes into account both neutral and ionized hydrogen diffusion, the latter enhanced by a built‐in electric field associated with the hydrogen doping gradient. The activation energies for the two diffusion processes are ∼1.2 and ∼0.8 eV, respectively. A formerly reported discrepancy between low‐ and high‐temperature results is lifted.Keywords
This publication has 26 references indexed in Scilit:
- Drastic Changes in the Electrical Resistance of Gold‐Doped Silicon Produced by a Hydrogen PlasmaJournal of the Electrochemical Society, 1985
- Atomic deuterium passivation of boron acceptor levels in silicon crystalsApplied Physics Letters, 1985
- Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal siliconPhysical Review B, 1985
- Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal siliconApplied Physics Letters, 1985
- Hydrogen localization near boron in siliconApplied Physics Letters, 1985
- Bulk acceptor compensation produced in p-type silicon at near-ambient temperatures by a H2O plasmaApplied Physics Letters, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983
- Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized siliconJournal of Applied Physics, 1983
- Doping effects on post-hydrogenated chemical-vapour-deposited amorphous siliconPhilosophical Magazine Part B, 1982