Real time control of InxGa1−xN molecular beam epitaxy growth
- 2 March 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (9), 1078-1080
- https://doi.org/10.1063/1.120970
Abstract
The growth of GaN and In x Ga 1−x N on c -plane sapphire substrates was carried out by molecular beam epitaxy using NH 3 . In situreflection high-energy electron diffraction(RHEED) was used to monitor the growth process. Oscillations of the specular beam intensity were observed during both GaN and In x Ga 1−x N deposition. This allows determining in real time the composition of In x Ga 1−x N alloys. The effects of the growth temperature and the Ga flux on the In incorporation rate were investigated. The critical thickness for InGaN islanding as a function of In mole fraction is also easily deduced from RHEED experiments.Keywords
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