Atomic structure of Si(111) (√3¯×√3¯)R30°-B by dynamical low-energy electron diffraction
- 15 February 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (5), 3276-3279
- https://doi.org/10.1103/physrevb.41.3276
Abstract
The geometric structure of Si(111) (√3¯×√3¯) R30°-B formed by annealing highly doped Si(111) samples was determined by low-energy electron diffraction. The optimal structure has the B atom occupying a substitutional site, different from adatom sites occupied by other group-III metals. Three-dimensional atomic coordinates and surface bond lengths have been determined. With B at the site, the compressive stress between Si and B atoms disappeared in the near surface region. The difference between an all Si √3 reconstruction structure stabilized by B doping with another structure observed by Ag doping is discussed.
Keywords
This publication has 22 references indexed in Scilit:
- Quantitative Structural Determination of Metallic Film Growth on a Semiconductor Crystal:Pb on Ge(111)Physical Review Letters, 1989
- X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surfacePhysical Review B, 1989
- High-Temperature X-Ray Standing-Wave Study: Application to Melting of Monolayers of Pb on Ge(111) SurfacesEurophysics Letters, 1988
- Electronic Structure of Localized Si Dangling-Bond Defects by Tunneling SpectroscopyPhysical Review Letters, 1988
- Geometric structure of the Si(111)√3×√3-Ga surfacePhysical Review B, 1988
- Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopyPhysical Review B, 1987
- Adsorbate registry and subsurface relaxation of the √3x√3 reconstructionsSurface Science, 1987
- Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometriesPhysical Review B, 1987
- Ge(111) : The atomic geometrySurface Science, 1986
- Surface reactions of silicon with aluminum and with indiumSurface Science, 1964