Quantitative Structural Determination of Metallic Film Growth on a Semiconductor Crystal:Pb on Ge(111)
- 30 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (5), 559-562
- https://doi.org/10.1103/physrevlett.62.559
Abstract
Step-by-step structural information has been obtained for the growth of a metallic film on a semiconductor substrate: Pb/Ge(111). Complete three-dimensional atomic coordinates have been determined for each equilibrium phase formed in the growth process, from submonolayer to multilayer coverages. The quantitative structural model explains for the first time the observed 30° rotation in the overlayer basis vectors of the 1×1 multilayer epitaxial Pb film from those of the two low-coverage phases.Keywords
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