Low Interface Recombination Velocity in GaAs-(Al, Ga)As Double Heterostructures Grown by Metal Organic Vapour Phase Epitaxy

Abstract

The interface recombination velocity in GaAs-(Al, Ga)As double heterostructures has been investigated at room temperature. The structures were grown by metal organic vapour phase epitaxy using the so-called “chimney” reactor. With the technique of photoluminescence decay, interface recombination velocities as low as 53 cm/s were found for n-isotype structures. For injection laser structures the lowest interface recombination velocity obtained was about 100 cm/s at high injection levels as deduced from luminescence efficiency measurements.