Analysis and Design of MESFET Gate Mixers
- 1 July 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 35 (7), 643-652
- https://doi.org/10.1109/tmtt.1987.1133723
Abstract
A general and efficient nonlinear/linear analysis of MESFET gate mixers is presented. In the nonlinear analysis, the Newton-Raphson algorithm is used in conjunction with a novel approach for computing partial derivatives required by the Jacobian.The study of conversion gain and stability characteristics of the mixer is based on S-parameter matrix theory. As a result of the analysis, the possibility of improving the conversion gain of X-band MESFET gate mixers by an appropriate choice of the RF drain termination has been theoretically and experimentally demonstrated.Keywords
This publication has 13 references indexed in Scilit:
- Design and Performance of a 45-GHz HEMT MixerIEEE Transactions on Microwave Theory and Techniques, 1986
- Modelling frequency dependence of output impedance of a microwave MESFET at low frequenciesElectronics Letters, 1985
- Theory and Analysis of GaAs MESFET Mixers (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1984
- Numerical Steady-State Analysis of Nonlinear Microwave Circuits with Periodic ExcitationIEEE Transactions on Microwave Theory and Techniques, 1983
- GaAs FET large-signal model and its application to circuit designsIEEE Transactions on Electron Devices, 1981
- The Conversion Gain and Stability of MESFET Gate MixersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Conversion gain of m.e.s.f.e.t. drain mixersElectronics Letters, 1979
- Modelling of an f.e.t. mixerElectronics Letters, 1978
- Microwave MESFET MixerIEEE Transactions on Microwave Theory and Techniques, 1976
- Nonlinear, Linear Analysis and Computer-Aided Design of Resistive MixersIEEE Transactions on Microwave Theory and Techniques, 1974