Negative magnetoresistance in asymmetric p+–i–n+ structures
- 16 September 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 25 (1), 241-249
- https://doi.org/10.1002/pssa.2210250122
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effects of a Magnetic Field on Double-Injection Negative Resistance in Long p+-π-n+ StructuresJournal of Applied Physics, 1970
- Temperature Dependence of Double Injection in a Long Silicon p+-π-n+ StructureJournal of Applied Physics, 1970
- Negative-Resistance Current-Voltage Characteristics of an Indium Antimonide p+−p−n+ DiodeJournal of Applied Physics, 1968
- Über die elektrischen eigenschaften von Ge-magnetodiodenSolid-State Electronics, 1968
- Theory of Double Injection into a Semiconductor of Finite Cross-SectionJournal of the Physics Society Japan, 1963
- The Madistor-A Magnetically Controlled Semiconductor Plasma DeviceProceedings of the IRE, 1962
- Double Injection in InsulatorsPhysical Review B, 1962
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Concentrating Holes and Electrons by Magnetic FieldsPhysical Review B, 1949