The effects of metal-n/sup +/ interface and space charge limited conduction on the performance of amorphous silicon thin-film transistors
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (3), 462-464
- https://doi.org/10.1109/16.275240
Abstract
No abstract availableKeywords
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