Effect of surface states on the amphoteric behavior of Sn in vapor epitaxial GaAs
- 15 February 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 12 (4), 283-285
- https://doi.org/10.1016/0038-1098(73)90699-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAsJournal of Physics and Chemistry of Solids, 1971
- Ionized Impurity Density in n-Type GaAsJournal of Applied Physics, 1970
- Surface properties of n-type gallium arsenideSurface Science, 1968
- The diffusion of tin and selenium in gallium arsenideSolid-State Electronics, 1963
- The distribution of zinc between solid InSb and In-Sb meltsJournal of Physics and Chemistry of Solids, 1962
- Ionization Interaction between Impurities in Semiconductors and InsulatorsPhysical Review B, 1956