Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs
- 1 January 1971
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 32 (3), 571-580
- https://doi.org/10.1016/0022-3697(71)90006-0
Abstract
No abstract availableKeywords
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