Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon Wafers
- 1 January 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (1), L31-34
- https://doi.org/10.1143/jjap.20.l31
Abstract
An improved intrinsic gettering (IG) technique for silicon wafers subjected to a high temperature of at least 1200°C is developed. It has been shown that multi-step annealing from low to high temperatures successively can enhance the IG effectiveness for high-temperature-annealed wafers. Moreover, this technique produces the IG ability even in a low oxygen wafer, ∼11×1017 cm-3.Keywords
This publication has 6 references indexed in Scilit:
- Precipitation and redistribution of oxygen in Czochralski-grown siliconApplied Physics Letters, 1980
- Reduction of saucer pit microdefects in epitaxial silicon wafer by intrinsic getteringApplied Physics Letters, 1980
- A Study of Stacking Faults during CMOS Processing: Origin, Elimination and Contribution to LeakageJournal of the Electrochemical Society, 1980
- Homogeneous nucleation of oxide precipitates in Czochralski-grown siliconApplied Physics Letters, 1980
- Lifetime improvement in Czochralski-grown silicon wafers by the use of a two-step annealingApplied Physics Letters, 1980
- Gettering of surface and bulk impurities in Czochralski silicon wafersApplied Physics Letters, 1978