Electronic transport properties of tungsten silicide thin films
- 1 March 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (2), 309-325
- https://doi.org/10.1007/bf02656682
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Electronic transport properties of TiSi2 thin filmsJournal of Vacuum Science & Technology B, 1984
- Sputtering of multicomponent materialsJournal of Vacuum Science & Technology A, 1983
- Properties of MoSi2 and WSi2, magnetron cosputtered from elemental targetsJournal of Electronic Materials, 1982
- Effects of grain boundaries on the resistivity of co-sputtered WSi2 filmsThin Solid Films, 1982
- One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET TechnologyJournal of the Electrochemical Society, 1981
- Optical Characterization of Tungsten Silicide Thin FilmsJournal of the Electrochemical Society, 1981
- Refractory metal silicide formation induced by As+ implantationApplied Physics Letters, 1980
- Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit ApplicationsJournal of the Electrochemical Society, 1980
- Electrical conduction in metalsPhysics Today, 1978
- Interstitial AlloysPublished by Springer Nature ,1967