MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junction
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 536-542
- https://doi.org/10.1016/0022-0248(87)90449-0
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
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- Charge multiplication in Au-SiC (6H) Schottky junctionsJournal of Applied Physics, 1975
- Ion-Beam Deposition of Thin Films of Diamondlike CarbonJournal of Applied Physics, 1971