Annealing-temperature influence on the dispersive diffusion of hydrogen in undopeda-Si:H

Abstract

We have measured by the method of elastic-recoil detection analysis the variation of the dispersion parameter α of hydrogen diffusion in undoped a-Si:H as a function of the annealing temperature ${\mathit{T}}_{\mathit{a}}$ between 350 and 470 °C. We found that α increases with ${\mathit{T}}_{\mathit{a}}$. We suggest a mechanism which can explain this new result, as well as the variation of α with the film-deposition temperature reported earlier.