Low-voltage ZnO thin-film transistors with high-KBi1.5Zn1.0Nb1.5O7 gate insulator for transparent and flexible electronics
- 22 July 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (4)
- https://doi.org/10.1063/1.1993762
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Hall and Field‐Effect Mobilities of Electrons Accumulated at a Lattice‐Matched ZnO/ScAlMgO4 HeterointerfaceAdvanced Materials, 2004
- Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperatureApplied Physics Letters, 2004
- Spin-coated zinc oxide transparent transistorsJournal of Physics D: Applied Physics, 2003
- Low-loss, tunable bismuth zinc niobate films deposited by rf magnetron sputteringApplied Physics Letters, 2003
- Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide SemiconductorScience, 2003
- Transparent ZnO thin-film transistor fabricated by rf magnetron sputteringApplied Physics Letters, 2003
- Effects of inductively coupled plasma oxidation on the properties of polycrystalline silicon films and thin film transistorsApplied Physics Letters, 1999
- Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate InsulatorsScience, 1999
- Invisible circuitsNature, 1997