13. Measurement of the lattice constant of SiGe heteroepitaxial layers grown on a silicon substrate
- 1 December 1978
- Vol. 28 (12), 571-578
- https://doi.org/10.1016/0042-207x(78)90014-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Some practical remarks on the design of experimental systems for expitaxial growth of Si, Ge and SiGeVacuum, 1974
- Oxidation of silicon-germanium alloysJournal of Crystal Growth, 1972
- Defects in epitaxial layers of silicon-germanium grown on silicon substratesJournal of Crystal Growth, 1972
- Epitaxial growth of silicon-germanium single crystalsThin Solid Films, 1972