Analytical modeling of a-Si:H thin-film transistors

Abstract

Accurate analytical expressions have been derived, from basic principles, for the sheet conductance of the n‐channel a‐Si:H thin‐film transistors. The basic principles apply two different energy band models, one for the a‐Si bulk and one for the a‐Si–SiO₂ interface. The physical parameters needed for the model are easily obtained from an experimental sheet conductance versus the gate voltage curve. The basic expressions for the sheet conductance are then simplified and result in two sets of simple formulas which are employed in the calculation of the I_D vs V_D characteristics.