A simplified model for the static characteristics of amorphous silicon thin-film transistors
- 30 June 1986
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (6), 639-645
- https://doi.org/10.1016/0038-1101(86)90146-2
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Amorphous silicon bulk barrier phototransistor with Schottky barrier emitterApplied Physics Letters, 1985
- Thin film transistors for large area electronicsJournal of Vacuum Science & Technology B, 1984
- Reduction in the localized band-gap states in amorphous silicon by annealing and hydrogen implantationApplied Physics Letters, 1983
- Promise and challenge of thin-film silicon approaches to active matricesIEEE Transactions on Electron Devices, 1983
- Dual-gate a—Si:H thin film transistorsIEEE Electron Device Letters, 1982
- New analysis of field-effect conductance in hydrogenated amorphous silicon thin-film transistorsApplied Physics Letters, 1982
- Influence of Gap States on Basic Characteristics of a-Si:H Thin Film TransistorsJapanese Journal of Applied Physics, 1982
- An amorphous silicon thin film transistor: Theory and experimentSolid-State Electronics, 1976
- Field effect conductance modulation in vacuum−evaporated amorphous silicon filmsJournal of Applied Physics, 1975