ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

Abstract

Good quality ZnSe-ZnS strained-layer superlattice (SLS) has been successfully fabricated for the first time by low pressure metalorganic vapor phase epitaxy (MOVPE) using methylalkyls (dimethylzinc, dimethylselenide, and dimethylsulfide). The satellite peak observed by x-ray diffraction measurements and the periodic behavior of the atomic profiles by secondary ion mass spectrometry measurements confirm the formation of the SLS structure. From the photoluminescence measurements, the quantum size effect has been evidenced by the relationship between the ZnSe well-layer thickness and the peak energy shift of the light emission. Our results show that low pressure MOVPE using VI group alkyls can be quite useful for the growth of ZnSe-ZnS SLS.