Excess noise in silicon avalanche photodiodes
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4), 1605-1607
- https://doi.org/10.1063/1.322778
Abstract
The electric field dependence of the excess noise factor F in silicon reach‐through avalanche photodiodes has been studied. The value of F is found to decrease with a decrease in the maximum electric field of the junction. This result shows sufficiently good agreement with a simplified calculation of McIntyre’s equation.Keywords
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