An automatic carrier concentration profile plotter using an electrochemical technique
- 1 November 1975
- journal article
- Published by Springer Nature in Journal of Applied Electrochemistry
- Vol. 5 (4), 319-328
- https://doi.org/10.1007/bf00608796
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electrochemical capacitance characterization of n-type gallium arsenideJournal of Applied Electrochemistry, 1974
- Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniquesJournal of Applied Physics, 1974
- Electrochemical technique for the continuous automatic plotting of semiconductor donor concentration over large depthsElectronics Letters, 1974
- The electrochemical characterization of n-type gallium arsenideJournal of Applied Electrochemistry, 1973
- An instrument for the rapid determination of semiconductor impurity profilesJournal of Physics E: Scientific Instruments, 1971
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- Measurement of Epitaxial Doping Density vs. DepthJournal of the Electrochemical Society, 1968