Vacancy tetrahedra in copper due to electron irradiation in the high-voltage microscope

Abstract

Under suitable conditions of irradiation in the high-voltage microscope, stacking-fault tetrahedra have been found to form in copper specimens. These defects are thought to be of vacancy type, in contrast to the more usually observed displacement damage, which is of interstitial type. The authors are grateful to Dr. V. E. Cosslett for the use of the Cambridge microscope, to Dr. L. M. Brown for valuable discussions and to Drs. Shoaib and Segall for making available details of their work prior to publication.