On the nature of the kink in the carrier profile for phosphorus-diffused layers in silicon
- 1 July 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (1), 2-4
- https://doi.org/10.1063/1.1654200
Abstract
The mechanism of formation of the kink in the impurity profile of phosphorus‐diffused layers in silicon is shown to be related to the ``tail'' that is formed during low‐temperature heat treatments. The concentration at which the tail is formed is a function of temperature with an activation energy of 0.79 eV. The enhanced diffusion which gives rise to the tail depends on processes occurring in the high‐concentration region. A complex model is required to explain all of these results.Keywords
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