On the properties of AlN thin films grown by low temperature reactive r.f. sputtering
- 1 June 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 139 (3), 261-274
- https://doi.org/10.1016/0040-6090(86)90056-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputteringApplied Physics Letters, 1980
- Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour depositionPhysica Status Solidi (a), 1977
- Theory of interdigital couplers on nonpiezoelectric substratesJournal of Applied Physics, 1973
- Epitaxially grown AlN and its optical band gapJournal of Applied Physics, 1973
- Structural, Optical, and Dielectric Properties of Reactively Sputtered Films in the System AlN–BNJournal of Vacuum Science and Technology, 1969