Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition
- 16 January 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 39 (1), 173-181
- https://doi.org/10.1002/pssa.2210390119
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Chemical and plasmachemical vapour deposition of aluminium nitride layersCrystal Research and Technology, 1976
- Zur Epitaxie von Galliumnitrid auf nichtstöchiometrischem Spinell im System GaCl/NH3/HeCrystal Research and Technology, 1975
- Kinetics of the epitaxial growth of GaN using Ga, HCl and NH3Journal of Crystal Growth, 1974
- Mass Spectrometric Studies of Vapor-Phase Crystal GrowthJournal of the Electrochemical Society, 1972
- Reflection of Light by a System of Nonabsorbing Isotropic Film–Nonabsorbing Isotropic Substrate with Randomly Rough BoundariesJournal of the Optical Society of America, 1971
- Growth Characteristics of AlN Films Pyrolytically Deposited on SiJournal of Applied Physics, 1968
- Optical Absorption Edge of AIN Single CrystalsPhysica Status Solidi (b), 1968
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967
- Relation between the Height Distribution of a Rough Surface and the Reflectance at Normal IncidenceJournal of the Optical Society of America, 1963
- Observations on the Chlorogallates and Related Compounds1Journal of the American Chemical Society, 1950