Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
- 20 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (21), 2645-2647
- https://doi.org/10.1063/1.121085
Abstract
We have employed near-field scanning optical microscopy to investigate the influence of specific microstructural defects on the optical properties of thin InGaN/GaN epilayers and quantum wells. These defects are empty “pinholes” with a hexahedron cone morphology that are nucleated by threading dislocations from the GaN buffer layer. By correlating atomic force microscopy with spatially and spectrally resolved photoluminescence (PL) on a 100 nm spatial scale, we find that the pinholes have no clearly observable effect on the PL efficiency, at least partly due to the strong carrier localization in the InGaN nonrandom alloy.Keywords
This publication has 16 references indexed in Scilit:
- Spatially resolved cathodoluminescence spectra of InGaN quantum wellsApplied Physics Letters, 1997
- Gain spectroscopy on InGaN/GaN quantum well diodesApplied Physics Letters, 1997
- Nitride-based semiconductors for blue and green light-emitting devicesNature, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Recombination dynamics in InGaN quantum wellsApplied Physics Letters, 1996
- A near-field scanning optical microscopy study of the photoluminescence from GaN filmsApplied Physics Letters, 1996
- Spatial distribution of the luminescence in GaN thin filmsApplied Physics Letters, 1996
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well DeviceJapanese Journal of Applied Physics, 1995