Implantation of shallow impurities in Cr-doped semi-insulating GaAs
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9), 699-701
- https://doi.org/10.1063/1.91259
Abstract
Zinc and selenium implantations have been performed in Cr‐doped semi‐insulating GaAs. We show that all zinc and selenium implanted impurities are electrically active after annealing at 900 °C. But, in addition to the implantation distribution, there is a distribution induced by the chromium outdiffusion during annealing leading to a Cr‐depleted zone, which can become conductive. By taking into account these distributions, the electrical measurements may be explained.Keywords
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