Anisotropically etched Si surface and the electrical properties of Si/HgCdTe heterostructures
- 20 March 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 428 (1-2), 165-169
- https://doi.org/10.1016/s0040-6090(02)01169-0
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devicesMaterials Science and Engineering B, 1999
- Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxyApplied Physics Letters, 1998
- Thin films of HgCdTe on silicon surfacesThin Solid Films, 1998
- High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxyApplied Physics Letters, 1997
- Advances in vapor phase epitaxy of HgCdTe on sapphire and siliconPublished by SPIE-Intl Soc Optical Eng ,1996
- Silicon microstructuring technologyMaterials Science and Engineering: R: Reports, 1996
- Structural properties of CdTe and Hg1 − xCdxTe epitaxial layers grown on sapphire substratesJournal of Crystal Growth, 1996
- Deposition of HgCdTe epitaxial layers on anisotropically etched silicon surfaces by laser evaporationApplied Surface Science, 1996
- Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxyJournal of Crystal Growth, 1996
- Molecular-beam epitaxial growth of CdTe(112) on Si(112) substratesApplied Physics Letters, 1995