Surface effects in layered semiconductors and
- 19 February 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (8), 085313
- https://doi.org/10.1103/physrevb.69.085313
Abstract
Scanning tunneling spectroscopy of and layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.
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