Electronic band structure of single-crystal and single-layerInfluence of interlayer van der Waals interactions
- 2 November 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (20), 205416
- https://doi.org/10.1103/physrevb.64.205416
Abstract
The valence band structure of the layered transition metal dichalcogenide has been determined experimentally by angle resolved photoelectron spectroscopy and theoretically by augmented spherical wave band structure calculations as based on density functional theory. Good agreement between experimental and calculated band structure is observed for single crystal An experimental band structure of a single layer was determined from an electronically decoupled film prepared on a single crystalline graphite substrate by metal-organic van der Waals epitaxy. The polarization dependent photoemission selection rules of the single layer film are appropriate for a free standing film. The experimental single layer band structure shows some differences compared to band structure calculations using bulk atomic positions within the layer. We conclude that relaxation of the single layer occurs as a consequence of the missing interlayer interactions leading to close agreement between electronic structure of the single layer and single crystal. As a consequence of the missing interlayer interactions the valence band maximum for the single layer is located at the K point of the Brillouin zone.
Keywords
This publication has 55 references indexed in Scilit:
- k parallel -resolved electronic structure of quasi-free 2-dimensional HfS 2 clustersEurophysics Letters, 2000
- Spin resolved photoemission spectroscopy on WSe2Journal of Electron Spectroscopy and Related Phenomena, 1999
- Bulk and surface electronic structure ofandPhysical Review B, 1997
- Electronic properties of intercalation complexes of the transition metal dichalcogenidesAdvances in Physics, 1987
- Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxyJournal of Vacuum Science & Technology B, 1985
- Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103Atomic Data and Nuclear Data Tables, 1985
- Semiconductor to semimetal transition in TiS2at 40 kbarJournal of Physics C: Solid State Physics, 1984
- Angle-resolved photoemission and secondary electron emission from single-crystal graphitePhysical Review B, 1983
- Structural destabilization induced by lithium intercalation in MoS2 and related compoundsCanadian Journal of Physics, 1983
- Surface-structure determination of the layered compounds Moand Nbby low-energy electron diffractionPhysical Review B, 1977