Effects of doping on polysilicon etch rate in a fluorine-containing plasma
- 15 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6), 2221-2225
- https://doi.org/10.1063/1.334366
Abstract
The effects of doping on the polysilicon etch rate in a CF4-CF3Cl-O2 planar plasma reactor are described. The effect is related only to the active carrier concentration and not to the total doping level. No significant change in etch rate was observed for carrier concentrations below 1019 cm−3. At higher concentrations the etch rate rapidly increases for phosphorus and arsenic doping and decreases for boron. A qualitative model, which explains experimental results, is described.Keywords
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